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hal556, HAL560, hal566 two-wire hall effect edition aug. 3, 2000 6251-425-2ds mic r onas micronas sensor family
hal55x, hal56x 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 12 4. type descriptions 12 4.1. hal556 14 4.2. HAL560 16 4.3. hal566 18 5. application notes 18 5.1. application circuit 18 5.2. extended operating conditions 18 5.3. start-up behavior 19 5.4. ambient temperature 19 5.5. emc and esd 20 6. data sheet history
hal55x, hal56x 3 micronas two-wire hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction this sensor family consists of different two-wire hall switches produced in cmos technology. all sensors change the current consumption depending on the ex- ternal magnetic field and require only two wires between sensor and evaluation circuit. the sensors of this family differ in the magnetic switching behavior and switching points. the sensors include a temperature-compensated hall plate with active offset compensation, a comparator, and a current source. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed reference values (switching points). according- ly, the current source is switched on (high current consumption) or off (low current consumption). the active offset compensation leads to constant mag- netic characteristics in the full supply voltage and tem- perature range. in addition, the magnetic parameters are robust against mechanical stress effects. the sensors are designed for industrial and automotive applications and operate with supply voltages from 4 v to 24 v in the junction temperature range from ?40 c up to 170 c. all sensors are available in the smd-package sot-89b and in the leaded version to-92ua. 1.1. features: ? current output for two-wire applications ? junction temperature range from ?40 c up to 170 c. ? operates from 4 v to 24 v supply voltage ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? switching offset compensation at typically 145 khz ? overvoltage and reverse-voltage protection ? magnetic characteristics are robust against mechani- cal stress effects ? constant magnetic switching points over a wide supply voltage range ? the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics ? ideal sensor for applications in extreme automotive and industrial environments ? emc corresponding to din 40839 1.2. family overview the types differ according to the mode of switching and the magnetic switching points. type switching behavior sensitivity see page 556 unipolar very high 12 560 unipolar inverted low 14 566 unipolar inverted very high 16 unipolar switching sensors: the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. unipolar inverted switching sensors: the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side.
hal55x, hal56x 4 micronas 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range a k e hal556 556a 556k 556e HAL560 560a 560k 560e hal566 566a 566k 566e 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = ? 40 k: t j = ? 40 e: t j = ? 40 note: due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (t a ) and junction temperature. please refer section 5.4. on page 19 for details. 1.5. hall sensor package codes type: 556, 560, or 566 halxxxpa-t temperature range: a, k, or e package: sf for sot-89b ua for to-92ua ? 40 hal556ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: ? ordering codes for hall sensors ? . 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual rework- ing, a component body temperature of 260 fig. 1?1: pin configuration gnd 2 1 v dd nc 3
hal55x, hal56x 5 micronas 2. functional description the hal 55x, hal 56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. in the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the hall sensor. in the high current consumption state, the current source is switched on and the current consumption is caused by the current through the hall sensor and the current source. the built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bounc- ing. magnetic offset caused by mechanical stress is com- pensated for by using the ? switching offset compensa- tion technique ? . an internal oscillator provides a two- phase clock. in each phase, the current is forced through the hall plate in a different direction, and the hall voltage is measured. at the end of the two phases, the hall volt- ages are averaged and thereby the offset voltages are eliminated. the average value is compared with the fixed switching points. subsequently, the current con- sumption switches to the corresponding state. the amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external protection diode is needed for reverse voltages ranging from 0 v to ? 15 v. fig. 2 ? 1: hal55x, hal 56x block diagram temperature dependent bias switch hysteresis control comparator current source v dd 1 clock hall plate gnd 2 hal55x, hal 56x reverse voltage & overvoltage protection t i ddlow i dd 1/f osc = 6.9 ? 2: timing diagram (example: hal 56x)
hal55x, hal56x 6 micronas 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 4.55 1.7 min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 ? ? 2: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 0.75 ?
hal55x, hal56x 7 micronas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 1) 2) 28 2) v i ddz supply current through protection device 1 ? 50 2) ? 200 3) 50 2) 200 3) ma ma t s storage temperature range ? 65 150 ? 40 ? 40 150 170 4) ? 18 v with a 100 ? ? 16 v with a 30 ? ? ? 3) 3) t < 2 ms 4) t < 1000 h stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4 24 v t a ambient temperature for continuos operation ? 40 ? 40 85 1) 125 2) ? ? a ? type or the ? k ? type and v dd ? a ? type and v dd
hal55x, hal56x 8 micronas 3.6. electrical characteristics at t j = ? 40 ? 28.5 32 v i dd = 25 ma, t j = 25 ? 90 145 ? khz t j = 25 ? 75 145 ? khz t en(o) enable time of output after setting of v dd 1 20 30 ? ? ? ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 3 ? 3 r thja case to-92ua thermal resistance junction to soldering point ? ? 150 200 k/w 1) b > b on + 2 mt or b < b off ? 2 mt for hal 55x, b > b off + 2 mt or b < b on ? 2 mt for hal 56x fig. 3 ? 3: recommended pad size sot-89b dimensions in mm 5.0 2.0 2.0 1.0
hal55x, hal56x 9 micronas 3.7. magnetic characteristics overview at t j = ? 40 ? 40 ? 40 ? 40
hal55x, hal56x 10 micronas ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 ? 15 ? 10 ? 5 0 5 101520253035 v ma v dd i dd t a = ? 40 ? 4: typical current consumption versus supply voltage i ddlow i ddhigh t a = 170 ? 5: typical current consumption versus supply voltage i ddlow i ddhigh t a = ? 40 ? 50 0 50 100 150 200 ? 6: typical current consumption versus ambient temperature hal 55x, hal 56x i ddhigh i ddlow v dd = 4 v v dd = 12 v v dd = 24 v 0 20 40 60 80 100 120 140 160 180 200 ? 50 0 50 100 150 200 ? 7: typ. internal chopper frequency versus ambient temperature hal 55x, hal 56x v dd = 4 v v dd = 12 v v dd = 24 v
hal55x, hal56x 11 micronas 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v khz v dd f osc fig. 3 ? 8: typ. internal chopper frequency versus supply voltage hal 55x, hal 56x t a = ? 40 ? 9: typ. internal chopper frequency versus supply voltage hal 55x, hal 56x t a = ? 40
hal556 12 micronas 4. type description 4.1. hal 556 the hal 556 is a very sensitive unipolar switching sen- sor (see fig. 4 ? 1). the sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 55x, hal 56x two-wire sensor family, the hal566 is a sensor with the same magnetic character- istics but with an inverted output characteristic. magnetic features: ? switching type: unipolar ? very high sensitivity ? typical b on : 6 mt at room temperature ? typical b off : 4 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 556 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys current consumption 0b on b off i ddlow b fig. 4 ? 1: definition of magnetic switching points for the hal 556 i ddhigh magnetic characteristics at t j = ? 40 ? 40 ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 changes to the previous edition: ? upper limit for b hys at ? 40 ? specification for 140
hal556 13 micronas 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off hal 556 b on b off fig. 4 ? 2: typ. magnetic switching points versus supply voltage t a = ? 40 ? 3: typ. magnetic switching points versus supply voltage t a = ? 40 ? 50 0 50 100 150 200 ? 4: magnetic switching points versus temperature v dd = 4 v v dd = 12 v v dd = 24 v note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
HAL560 14 micronas 4.2. hal 560 the hal 560 is a low sensitive unipolar switching sensor with an inverted output (see fig. 4 ? 5). the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar inverted ? low sensitivity ? typical b on : 45.6 mt at room temperature ? typical b off : 51.7 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 560 is designed for applications with one mag- netic polarity and strong magnetic amplitudes at the sen- sor position where an inverted output signal is required such as: ? applications with strong magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys 0b off b on b fig. 4 ? 5: definition of magnetic switching points for the hal 560 i ddhigh i ddlow current consumption magnetic characteristics at t j = ? 40 ? 40 ? b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 changes to the previous edition: ? tighter specification for b off at ? 40 ? specification for 140
HAL560 15 micronas 30 35 40 45 50 55 60 0 5 10 15 20 25 30 v mt v dd b on b off hal 560 b on b off fig. 4 ? 6: typ. magnetic switching points versus supply voltage t a = ? 40 ? 7: typ. magnetic switching points versus supply voltage t a = ? 40 ? 50 0 50 100 150 200 ? 8: magnetic switching points versus temperature v dd = 4 v v dd = 12 v v dd = 24 v note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal566 16 micronas 4.3. hal 566 the hal 566 is a very sensitive unipolar switching sensor with an inverted output (see fig. 4 ? 9). the sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. it does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 55x, hal 56x two-wire sensor family, the hal556 is a sensor with the same magnetic character- istics but with a normal output characteristic. magnetic features: ? switching type: unipolar inverted ? high sensitivity ? typical b on : 4 mt at room temperature ? typical b off : 5.9 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 566 is designed for applications with one mag- netic polarity and weak magnetic amplitudes at the sen- sor position where an inverted output signal is required such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solutions to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys 0b off b on b fig. 4 ? 9: definition of magnetic switching points for the hal 566 i ddhigh i ddlow current consumption magnetic characteristics at t j = ? 40 ? 40 ? b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 changes to the previous edition: ? specification for 140
hal566 17 micronas 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off hal 566 b off fig. 4 ? 10: typ. magnetic switching points versus supply voltage b on t a = ? 40 ? 11: typ. magnetic switching points versus supply voltage b on t a = ? 40 ? 50 0 50 100 150 200 ? 12: magnetic switching points versus temperature v dd = 4 v v dd = 12 v v dd = 24 v note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal55x, hal56x 18 micronas 5. application notes 5.1. application circuit figure 5 ? 1 shows a simple application with a two-wire sensor. the current consumption can be detected by measuring the voltage over r l . for correct functioning of the sensor, the voltage between pin 1 and 2 (v dd ) must be a minimum of 4 v. with the maximum current consumption of 17 ma, the maximum r l can be calcu- lated as: r lmax v supmin 4v 17 ma v sup r l 1v dd gnd 2 v sig fig. 5 ? 1: application circuit 1 for applications with disturbances on the supply line or radiated disturbances, a series resistor r v (ranging from 10 ? ?) ? 2). in this case, the maximum r l can be calculated as: r lmax v supmin 4v 17 ma r v 1v dd gnd 2 fig. 5 ? 2: application circuit 2 4.7 nf r v v sup r l v sig 5.2. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 7). typically, the sensors operate with supply voltages above 3 v. however, below 4 v, the current consumption and the magnetic characteristics may be outside the specification. note: the functionality of the sensor below 4 v is not tested on a regular base. for special test conditions, please contact micronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the current consumption is not defined and can toggle between low and high. hal556: after t en(o) , the current consumption will be high if the applied magnetic field b is above b on . the current con- sumption will be low if b is below b off . HAL560, hal 566: in case of sensors with an inverted switching behavior, the current consumption will be low if b > b off and high if b < b on . note: for magnetic fields between b off and b on , the current consumption of the hal sensor will be either low or high after applying v dd . in order to achieve a defined current consumption, the applied magnetic field must be above b on , respectively, below b off .
hal55x, hal56x 19 micronas 5.4. ambient temperature due to internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tempera- ture t a ). t j = t a + ? ? ? ? t i dd *v dd *r th * t on t off t on 5.5. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 5 ? 2). the series resistor and the capacitor should be placed as closely as pos- sible to the hal sensor. applications with this arrangement passed the emc tests according to the product standards din 40839. note: the international standard iso 7637 is similar to the product standard din 40839. please contact micronas for the detailed investigation reports with the emc and esd results. 4.7 nf v emc r v1 100 ? ? ? 3: recommended emc test circuit
hal55x, hal56x 20 micronas 6. data sheet history 1. final data sheet: ? hal 556, hal 560, hal 566, two- wire hall effect sensor family, april 6, 1999, 6251-425-1ds. first release of the final data sheet. 2 final data sheet: ? hal 556, hal 560, hal 566, two- wire hall effect sensor family, aug. 3, 2000, 6251-425-2ds. second release of the final data sheet. major changes: ? magnetic characteristics for hal 556 and hal 560 changed. please refer to pages 12 and 14 for details. ? new temperature ranges ? k ? and ? a ? added ? temperature range ? c ? removed ? outline dimensions for sot-89b: reduced toler- ances ? smd package sot-89a removed micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (08/2000) order no. 6251-425-2ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.
micronas page 1 of 1 subject: data sheet concerned: supplement: edition: data sheet supplement changes: C position tolerance of the sensitive area reduced C tolerances of the outline dimensions reduced C thickness of the leadframe changed to 0.15 mm (old 0.125 mm) C sot-89a will be discontinued in december 2000 position of sensitive area note: a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. position tolerance of the sensitive area is defined in the package diagram. hal 114, 115 hal 50x, 51x hal 621, 629 hal 55x, hal 56x x center of the package center of the package y 0.95 mm nominal 0.85 mm nominal min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 4.55 1.7 2 ? 0.2 sensitive area top view 1.15 improvement of sot-89b package hal 114, 115, 6251-456-2ds, dec. 20, 1999 hal 50x, 51x, 6251-485-1ds, feb. 16, 1999 hal 55x, 56x, 6251-425-1ds, april 6, 1999 hal 621, 629, 6251-504-1ds, feb. 3, 2000 no. 1/ 6251-531-1dss july 4, 2000 hal 11x, hal 5xx, hal 62x

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